Light-emitting device

ABSTRACT

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. patent application Ser. No. 15/948,738, filed on Apr. 9, 2018, now pending, which is a continuation application of U.S. patent application Ser. No. 15/858,534, filed on Dec. 29, 2017, now U.S. Pat. No. 10,199,544, which is a continuation application of U.S. patent application Ser. No. 15/350,893, filed on Nov. 14, 2016, now U.S. Pat. No. 9,893,241, which claims the right of priority based on TW Application Serial No. 104137443, filed on Nov. 13, 2015, and the content of which is hereby incorporated by reference in its entirety.

TECHNICAL FIELD

The application relates to a structure of a light-emitting device, and more particularly, to a light-emitting device comprising a semiconductor stack and a pad on the semiconductor stack.

DESCRIPTION OF BACKGROUND ART

Light-Emitting Diode (LED) is a solid-state semiconductor light-emitting device, which has the advantages of low power consumption, low heat generation, long working lifetime, shockproof, small volume, fast reaction speed and good optoelectronic property, such as stable emission wavelength. Therefore, light-emitting diodes are widely used in household appliances, equipment indicators, and optoelectronic products.

SUMMARY OF THE APPLICATION

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the second semiconductor layer, surrounding a sidewall of the second semiconductor layer, and connected to the first semiconductor layer; a second contact layer on the second semiconductor layer and connected to the second semiconductor layer; a first pad on the semiconductor stack and connected to the first contact layer; a second pad on the semiconductor stack and connected to the second contact layer, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad, wherein the first contact layer on the second semiconductor layer surrounds the second contact layer from a top view of the light-emitting device.

A light-emitting device comprises a substrate; a semiconductor stack on the substrate and comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer comprises a surrounding part exposing a first surface of the first semiconductor layer; a via penetrating through the second semiconductor layer and the active layer to expose a second surface of the first semiconductor layer; a first contact layer covering the via and contacting the second surface of the first semiconductor layer; a first insulating layer or a second insulating layer comprising a first opening exposing the first semiconductor layer and a second opening exposing the second semiconductor layer; and a third insulating layer; wherein the substrate comprises a surface exposed around the semiconductor stack and an edge side, the first semiconductor layer comprises a first outside wall, the second semiconductor layer comprises a second outside wall, the third insulating layer covers the first outside wall of the first semiconductor layer and the second outside wall of the second semiconductor layer, and contacting the surface of the substrate exposed around the semiconductor stack, the third insulating layer comprises a portion contacting the surface of the substrate, and the portion of the third insulating layer comprises an edge side, and the edge side of the substrate is spaced apart from the edge side of the third insulating layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-7C illustrate a manufacturing method of a light-emitting device 1 or a light-emitting device 2 in accordance with embodiments of the present application;

FIG. 8 illustrates a top view of the light-emitting device 1 in accordance with an embodiment of the present application;

FIG. 9A illustrates a cross-sectional view of the light-emitting device 1 in accordance with an embodiment of the present application;

FIG. 9B illustrates a cross-sectional view of the light-emitting device 1 in accordance with an embodiment of the present application;

FIG. 10 illustrates a top view of the light-emitting device 2 in accordance with an embodiment of the present application;

FIG. 11A illustrates a cross-sectional view of the light-emitting device 2 in accordance with an embodiment of the present application;

FIG. 11B illustrates a cross-sectional view of the light-emitting device 2 in accordance with an embodiment of the present application;

FIGS. 12A-18B illustrate a manufacturing method of a light-emitting device 3 or a light-emitting device 4 in accordance with embodiments of the present application;

FIG. 19 illustrates a top view of the light-emitting device 3 in accordance with an embodiment of the present application;

FIG. 20 illustrates a cross-sectional view of the light-emitting device 3 in accordance with an embodiment of the present application;

FIG. 21 illustrates a top view of the light-emitting device 4 in accordance with an embodiment of the present application;

FIG. 22 illustrates a cross-sectional view of the light-emitting device 4 in accordance with an embodiment of the present application;

FIG. 23 illustrates a cross-sectional view of a light-emitting device 5 in accordance with an embodiment of the present application;

FIG. 24 illustrates a cross-sectional view of a light-emitting device 6 in accordance with an embodiment of the present application;

FIG. 25 illustrates a structure diagram of a light-emitting apparatus in accordance with an embodiment of the present application; and

FIG. 26 illustrates a structure diagram of a light-emitting apparatus in accordance with an embodiment of the present application.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The embodiment of the application is illustrated in detail, and is plotted in the drawings. The same or the similar part is illustrated in the drawings and the specification with the same number.

FIGS. 1A-11B illustrate a manufacturing method of a light-emitting device 1 or a light-emitting device 2 in accordance with embodiments of the present application.

As a top view in FIG. 1A and a cross-sectional view in FIG. 1B which is taken along line A-A′ of FIG. 1A show, the manufacturing method of the light-emitting device 1 or the light-emitting device 2 comprises a step of forming a mesa, which includes providing a substrate 11 a and forming a semiconductor stack 10 a on the substrate 11 a, wherein the semiconductor stack 10 a comprises a first semiconductor layer 101 a, a second semiconductor layer 102 a, and an active layer 103 a between the first semiconductor layer 101 a and the second semiconductor layer 102 a. The semiconductor stack 10 a can be patterned by lithography and etching to remove a portion of the second semiconductor layer 102 a and the active layer 103 a to form one or multiple semiconductor structures 1000 a and to form a surrounding part 111 a surrounding the one or multiple semiconductor structures 1000 a. The surrounding part 111 a exposes a first surface 1011 a of the first semiconductor layer 101 a. The one or multiple semiconductor structures 1000 a comprises a first outside wall 1003 a, a second outside wall 1001 a, and an inside wall 1002 a, wherein the first outside wall 1003 a is a sidewall of the first semiconductor layer 101 a, the second outside wall 1001 a is a sidewall of the active layer 103 a and/or a sidewall of the second semiconductor layer 102 a. One end of the second outside wall 1001 a is connected to a surface 102 s of the second semiconductor layer 102 a and another end of the second outside wall 1001 a is connected to the first surface 1011 a of the first semiconductor layer 101 a. One end of the inside wall 1002 a is connected to the surface 102 s of the second semiconductor layer 102 a and another end of the inside wall 1002 a is connected to a second surface 1012 a of the first semiconductor layer 101 a. Multiple semiconductor structures 1000 a are connected to each other through the first semiconductor layer 101 a. As shown in FIG. 1B, an obtuse angle is formed between the inside wall 1002 a of the semiconductor structure 1000 a and the second surface 1012 a of the first semiconductor layer 101 a. An obtuse angle or a right angle is formed between the first outside wall 1003 a of the semiconductor structure 1000 a and a surface 11 s of the substrate 11 a. An obtuse angle is formed between the second outside wall 1001 a of the semiconductor structure 1000 a and the first surface 1011 a of the first semiconductor layer 101 a. The surrounding part 111 a surrounds the semiconductor structure 1000 a, the top view of the surrounding part 111 a is a rectangular or a polygonal shape.

In an embodiment of the present application, the light-emitting device 1 or the light-emitting device 2 comprises a side less than 30 mil. When an external current is injected into the light-emitting device 1 or the light-emitting device 2, the semiconductor structure 1000 a is surrounded by the surrounding part 111 a to distribute the light field of the light-emitting device 1 or the light-emitting device 2 uniformly and reduce the forward voltage of the light-emitting device.

In an embodiment of the present application, the light-emitting device 1 or the light-emitting device 2 comprises a side larger than 30 mil. The semiconductor stack 10 a can be patterned by lithography and etching to remove a portion of the second semiconductor layer 102 a and the active layer 103 a to form one or multiple vias 100 a penetrating through the second semiconductor layer 102 a and the active layer 103 a, wherein the one or multiple vias 100 a expose one or more second surface 1012 a of the first semiconductor layer 101 a. When an external current is injected into the light-emitting device 1 or the light-emitting device 2, the surrounding part 111 a and the multiple vias 100 a are dispersedly disposed to distribute the light field distribution of the light-emitting device 1 or the light-emitting device 2 uniformly and reduce the forward voltage of the light-emitting device.

In an embodiment of the present application, the light-emitting device 1 or the light-emitting device 2 comprises a side less than 30 mil, the light-emitting device 1 or the light-emitting device 2 does not comprise one or multiple vias 100 a to increase a light-emitting area of the active layer.

In an embodiment of the present application, the one or multiple vias 100 a comprises an opening having a shape, such as circular, ellipsoidal, rectangular, polygonal, or any shape. The multiple vias 100 a can be arranged in a plurality of rows, and the vias 100 a in the adjacent two rows can be aligned with each other or staggered.

In an embodiment of the present application, the substrate 11 a can be a growth substrate, comprising gallium arsenide (GaAs) wafer for growing aluminum gallium indium phosphide (AlGaInP), sapphire (Al₂O₃) wafer, gallium nitride (GaN) wafer or silicon carbide (SiC) wafer for growing indium gallium nitride (InGaN). The semiconductor stack 10 a comprises optical characteristics, such as light-emitting angle or wavelength distribution, and electrical characteristics, such as forward voltage or reverse current. The semiconductor stack 10 a can be formed on the substrate 11 a by organic metal chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), or ion plating.

In an embodiment of the present application, the first semiconductor layer 101 a and the second semiconductor layer 102 a, such as a cladding layer or a confinement layer, have different conductivity types, electrical properties, polarities, or doping elements for providing electrons or holes. For example, the first semiconductor layer 101 a is an n-type semiconductor, and the second semiconductor layer 102 a is a p-type semiconductor. The active layer 103 a is formed between the first semiconductor layer 101 a and the second semiconductor layer 102 a. The electrons and holes combine in the active layer 103 a under a current driving to convert electric energy into light energy to emit a light. The wavelength of the light emitted from the light-emitting device 1 or the light-emitting device 2 is adjusted by changing the physical and chemical composition of one or more layers in the semiconductor stack 10 a. The material of the semiconductor stack 10 a comprises a group III-V semiconductor material, such as Al_(x)In_(y)Ga_((1-x-y))N or Al_(x)In_(y)Ga_((1-x-y))P, wherein 0≤x, y≤1; (x+y)≤1. According to the material of the active layer 103 a, when the material of the semiconductor stack 10 a is AlInGaP series material, red light having a wavelength between 610 nm and 650 nm or yellow light having a wavelength between 550 nm and 570 nm can be emitted. When the material of the semiconductor stack 10 a is InGaN series material, blue light having a wavelength between 450 nm and 490 nm or green light having a wavelength between 490 nm and 550 nm can be emitted. When the material of the semiconductor stack 10 a is AlGaN series material, UV light having a wavelength between 400 nm and 250 nm can be emitted. The active layer 103 a can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), a multi-quantum well structure, MQW). The material of the active layer 103 a can be i-type, p-type, or n-type semiconductor.

Following the step of forming the mesa, as a top view in FIG. 2A and a cross-sectional view in FIG. 2B which is taken along line A-A′ of FIG. 2A show, the manufacturing method of the light-emitting device 1 or the light-emitting device 2 comprises a step of forming the first insulating layer. A first insulating layer 20 a can be formed on the semiconductor structure 1000 a by sputter or vapor deposition, and patterned by lithography and etching to cover the first surface 1011 a of the surrounding part 111 a and the second surface 1012 a on the via 100 a, and cover the second outside wall 1001 a of the second semiconductor layer 102 a and the active layer 103 a of the semiconductor structure 1000 a and the inside wall 1002 a of the semiconductor structure 1000 a. The first insulating layer 20 a comprises a first insulating surrounding region 200 a covering the surrounding part 111 a, thereby the first surface 1011 a of the first semiconductor layer 101 a on the surrounding part 111 a is covered by the first insulating surrounding region 200 a; a first group of first insulating covering regions 201 a covering the vias 100 a, thereby the second surfaces 1012 a of the first semiconductor layer 101 a on the vias 100 a are covered by the first group of first insulating covering regions 201 a; and a second group of first insulating openings 202 a exposing the surface 102 s of the second semiconductor layer 102 a. The first group of first insulating covering regions 201 a is separated from each other, and is respectively corresponding to the multiple vias 100 a. The first insulating layer 20 a includes one layer or multiple layers. When the first insulating layer 20 a includes one layer, the first insulating layer 20 a protects the sidewall of the semiconductor structure 1000 a to prevent the active layer 103 a from being destroyed by the following processes. When the first insulating layer 20 a includes multiple layers, the first insulating layer 20 a includes two or more layers having different refractive indexes alternately stacked to form a Distributed Bragg reflector (DBR), which can selectively reflect light of a specific wavelength. The first insulating layer 20 a is formed of a non-conductive material and comprises organic material, such as Sub, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, or inorganic material, such as silicone, glass, or dielectric material, such as aluminum oxide (Al₂O₃), silicon nitride (SiN_(x)), silicon oxide (SiO_(x)), titanium oxide (TiO_(x)), or magnesium fluoride (MgF_(x)).

In an embodiment of the present application, following the step of forming the first insulating layer, as a top view in FIG. 3A and a cross-sectional view in FIG. 3B which is taken along line A-A′ of FIG. 3A show, the manufacturing method of the light-emitting device 1 or the light-emitting device 2 comprises a step of forming the transparent conductive layer. A transparent conductive layer 30 a can be formed in the second group of first insulating openings 202 a by sputter, vapor deposition or the like, wherein an outer edge 301 a of the transparent conductive layer 30 a is spaced apart from the first insulating layer 20 a with a distance to expose the surface 102 s of the second semiconductor layer 102 a. Since the transparent conductive layer 30 a is substantially formed on the entire surface of the second semiconductor layer 102 a and contacts the second semiconductor layer 102 a, the current can be uniformly spread throughout the entire second semiconductor layer 102 a by the transparent conductive layer 30 a. The material of the transparent conductive layer 30 a comprises a material being transparent to the light emitted from the active layer 103 a, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

In another embodiment of the present application, after the step of forming the mesa, the step of forming the transparent conductive layer can be performed first and is followed by the step of forming the first insulating layer.

In another embodiment of the present application, after the step of forming the mesa, the step of forming the first insulating layer can be omitted so the step of forming the transparent conductive layer can be directly performed.

In an embodiment of the present application, following the step of forming the transparent conductive layer, as a top view in FIG. 4A and a cross-sectional view in FIG. 4B which is taken along line A-A′ of FIG. 4A show, the manufacturing method of the light-emitting device 1 or the light-emitting device 2 comprises a step of forming the reflective structure. The reflective structure comprises a reflective layer 40 a and/or a barrier layer 41 a, which can be directly formed on the transparent conductive layer 30 a by sputter, vapor deposition, or the like, wherein the reflective layer 40 a is formed between the transparent conductive layer 30 a and the barrier layer 41 a. As the top view of the light-emitting device 1 or the light-emitting device 2 shows, an outer edge 401 a of the reflective layer 40 a can be disposed on the inner side or the outer side of the outer edge 301 a of the transparent conductive layer 30 a, or disposed to overlap with the outer edge 301 a of the transparent conductive layer 30 a, the outer edge 411 a of the barrier layer 41 a can be disposed on the inner side or the outer side of the outer edge 401 a of the reflective layer 40 a or provided to overlap with the outer edge 401 a of the reflective layer 40 a.

In another embodiment of the present application, the step of forming the transparent conductive layer can be omitted, and the step of forming the reflective structure is directly performed after the step of forming the mesa or the step of forming the first insulating layer. The reflective layer 40 a and/or the barrier layer 41 a is directly formed on the second semiconductor layer 102 a, and the reflective layer 40 a is formed between the second semiconductor layer 102 a and the barrier layer 41 a.

The reflective layer 40 a includes one layer or multiple layers, such as a Distributed Bragg reflector (DBR). The material of the reflective layer 40 a comprises a metal material having a high reflectance, for example, silver (Ag), aluminum (Al), or rhodium (Rh), or an alloy of the above materials. The high reflectance referred to herein means having 80% or more reflectance for a wavelength of a light emitted from the light-emitting device 1 or the light-emitting device 2. In an embodiment of the present application, the barrier layer 41 a covers the reflective layer 40 a to prevent the surface of the reflective layer 40 a from being oxidized that deteriorates the reflectivity of the reflective layer 40 a. The material of the barrier layer 41 a comprises metal material, such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or an alloy of the above materials. The barrier layer 41 a includes one layer or multiple layers, such as titanium (Ti)/aluminum (Al) and/or titanium (Ti)/tungsten (W). In an embodiment of the present application, the barrier layer 41 a comprises titanium (Ti)/aluminum (Al) on one side away from the reflective layer 40 a and titanium (Ti)/tungsten (W) on another side adjacent to the reflective layer 40 a. In one embodiment of the present application, the material of the reflective layer 40 a and the barrier layer 41 a preferably includes a metal material other than gold (Au) or copper (Cu).

In an embodiment of the present application, following the step of forming the reflective structure, as a top view in FIG. 5A, a cross-sectional view in FIG. 5B which is taken along line A-A′ of FIG. 5A, and a cross-sectional view in FIG. 5C which is taken along line B-B′ of FIG. 5A show, the manufacturing method of the light-emitting device 1 or the light-emitting device 2 comprises a step of forming the second insulating layer. A second insulating layer 50 a can be formed on the semiconductor structure 1000 a by sputter or vapor deposition, etc., and then patterned by lithography and etching to form a first group of second insulating openings 501 a to expose the first semiconductor layer 101 a and a second group of second insulating openings 502 a to expose the reflective layer 40 a or the barrier layer 41 a. During the patterning of the second insulating layer 50 a, the first insulating surrounding region 200 a which covers the surrounding part 111 a and the first group of first insulating covering regions 201 a formed in the vias 100 a are partially etched to expose the first semiconductor layer 101 a. A first group of first insulating layer openings 203 a is formed in the vias 100 a to expose the first semiconductor layer 101 a. In the present embodiment, as the top view in FIG. 5A shows, the first group of second insulating openings 501 a and the second group of second insulating openings 502 a comprise different widths or numbers. The opening shape of the first group of second insulating openings 501 a and the second group of second insulating openings 502 a comprises circular, elliptical, rectangular, polygonal, or arbitrary shapes. In the present embodiment, as shown in FIG. 5A, the first group of second insulating openings 501 a is separated from each other and arranged in a plurality of rows, and the first group of second insulating openings 501 a is corresponding to the multiple vias 100 a and the first group of first insulating openings 203 a. The second group of second insulating openings 502 a is disposed close to one side of the substrate 11 a, such as the left side or the right side of the substrate 11 a. The second group of second insulating openings 502 a is separated from each other and located between two adjacent rows of the first group of second insulating openings 501 a. The second insulating layer 50 a includes one layer or multiple layers. When the second insulating layer 50 a includes one layer, the second insulating layer 50 a protects the sidewalls of the semiconductor structure 1000 a to prevent destruction of the active layer 103 a by subsequent processes. When the second insulating layer 50 a includes multiple layers, the second insulating layer 50 a comprises two or more layers having different refractive index materials alternately stacked to form a Distributed Bragg reflector (DBR), which can selectively reflect light of a specific wavelength. The second insulating layer 50 a is formed of a non-conductive material comprising organic material, such as Sub, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, or inorganic material, such as silicone, glass, or dielectric material, such as aluminum oxide (Al₂O₃), silicon nitride (SiN_(x)), silicon oxide (SiO_(x)), titanium oxide (TiO_(x)), or magnesium fluoride (MgF_(x)).

Following the step of forming the second insulating layer, as a top view in FIG. 6A, a cross-sectional view in FIG. 6B which is taken along line A-A′ of FIG. 6A and a cross-sectional view in FIG. 6C which is taken along line B-B′ of FIG. 6A show, the manufacturing method of the light-emitting device 1 or the light-emitting device 2 comprises a step of forming the contact layer. A contact layer 60 a can be formed on the first semiconductor layer 101 a and the second semiconductor layer 102 a by sputter or vapor deposition, etc., and then patterned by lithography and etching to form one or more contact layer openings 602 a on the second group of second insulating openings 502 a to expose the reflective layer 40 a or the barrier layer 41 a, and define a pin region 600 a at a geometric center in the top view of the light-emitting device 1 or the light-emitting device 2. In the cross-sectional view of the light-emitting device 1 or the light-emitting device 2, the contact layer opening 602 a comprises a width larger than a width of any one of the second group of second insulating openings 502 a. In the top view of the light-emitting device 1 or the light-emitting device 2, the multiple contact layer openings 602 a are close to one side of the substrate 11 a, for example, to the left side or the right side of the substrate 11 a. The contact layer 60 a includes one layer or multiple layers. In order to reduce the resistance in contact with the first semiconductor layer 101 a, the material of the contact layer 60 a comprises metal material such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or an alloy of the above materials. In an embodiment of the present application, the material of the contact layer 60 a comprises a metal material other than gold (Au), copper (Cu). In an embodiment of the present application, the material of the contact layer 60 a comprises a metal having high reflectivity, such as aluminum (Al) or platinum (Pt). In an embodiment of the present application, one side of the contact layer 60 a contacting with the first semiconductor layer 101 a comprises chromium (Cr) or titanium (Ti) to increase the bonding strength with the first semiconductor layer 101 a.

In an embodiment of the present application, the contact layer 60 a covers all the vias 100 a and extends over the second semiconductor layer 102 a, wherein the contact layer 60 a is insulated from the second semiconductor layer 102 a by the second insulating layer 50 a and contacts the first semiconductor layer 101 a through the via 100 a. When an external current is injected into the light-emitting device 1 or the light-emitting device 2, the current is conducted to the first semiconductor layer 101 a by the multiple vias 100 a. In the present embodiment, two adjacent vias 100 a located on the same row comprise a first shortest distance there between, any via 100 a adjacent to the edge of the light-emitting device and the first outside wall 1003 a of the first semiconductor layer 101 a comprises a second shortest distance there between, wherein the first shortest distance is greater than the second shortest distance.

In another embodiment of the present application, the contact layer 60 a covers the surrounding part 111 a and the via 100 a, and extends over the second semiconductor layer 102 a, wherein the contact layer 60 a is insulated from the second semiconductor layer 102 a by the second insulating layer 50 a, and the contact layer 60 a contacts the first semiconductor layer 101 a by the surrounding part 111 a and the via 100 a. When an external current is injected into the light-emitting device 1 or the light-emitting device 2, one part of the current is conducted to the first semiconductor layer 101 a by the surrounding part 111 a and other part is conducted to the first semiconductor layer 101 a through the multiple vias 100 a. In the present embodiment, two adjacent vias 100 a located on the same row comprise a first shortest distance there between. Any via 100 a adjacent to the edge of the light-emitting device and the first outside wall 1003 a of the first semiconductor layer 101 a comprises a second shortest distance there between, wherein the first shortest distance is smaller than or equal to the second shortest distance.

In another embodiment of the present application, the multiple vias 100 a can be arranged in a first row and a second row. A first shortest distance is between two adjacent vias 100 a in the same row and a second shortest distance is between the via 100 a located in the first row and the via 100 a in the second row, wherein the first shortest distance is greater than or smaller than the second shortest distance.

In an embodiment of the present application, the multiple vias 100 a can be arranged in a first row, a second row and a third row. A first shortest distance is between the via 100 a in the first row and the via 100 a in the second row and a second shortest distance is between the via 100 a in the second row and the via 100 a in the third row, where the first shortest distance is smaller than the second shortest distance.

In an embodiment of the present application, following the step of forming the contact layer, the manufacturing method of the light-emitting device 1 or the light-emitting device 2 comprises a step of forming a third insulating layer. As a top view in FIG. 7A, a cross-sectional view in FIG. 7B which is taken along line A-A′ of FIG. 7A, and a cross-sectional view in FIG. 7C which is taken along line B-B′ of FIG. 7A show, a third insulating layer 70 a can be formed on the semiconductor structure 1000 a by sputter or vapor deposition, etc., and then patterned by lithography and etching to form a first group of third insulating openings 701 a on the contact layer 60 a to expose the contact layer 60 a shown in FIG. 6A and form a second group of third insulating openings 702 a on the one or more contact layer openings 602 a to expose the reflective layer 40 a or the barrier layer 41 a shown in FIG. 6A, wherein the contact layer 60 a on the second semiconductor layer 102 a is interposed between the second insulating layer 50 a and the third insulating layer 70 a, the first group of third insulating openings 701 a, and the first group of second insulating openings 501 a are offset from each other and do not overlap each other. The pin region 600 a is surrounded and covered by the third insulating layer 70 a. In the present embodiment, as shown in FIG. 7A, the first group of third insulating openings 701 a is separated from each other and is offset from the multiple vias 100 a. The second group of third insulating openings 702 a is separated from each other and respectively corresponding to the multiple contact layer openings 602 a. As shown in the top view of FIG. 7A, the first group of third insulating openings 701 a is close to one side of the substrate 11 a, for example, the right side, and the second group of third insulating openings 702 a is close to another side of the substrate 11 a, for example, the left side of the substrate 11 a. In the cross-sectional view of the light-emitting device 1 or the light-emitting device 2, any of the second group of third insulating openings 702 a comprises a width smaller than the width of any of the contact layer openings 602 a, the third insulating layer 70 a is filled to cover the sidewall of the contact layer opening 602 a along the contact layer opening 602 a, and exposes the reflective layer 40 a or the barrier layer 41 a to form the second group of third insulating openings 702 a. The third insulating layer 70 a includes one layer or multiple layers. When the third insulating layer 70 a includes multiple layers, the third insulating layer 70 a includes two or more layers having different refractive index alternately stacked to form a Distributed Bragg reflector (DBR), which can selectively reflects light of a specific wavelength. The third insulating layer 70 a is formed of a non-conductive material comprising organic material, such as Sub, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, or inorganic material, such as silicone, glass, or dielectric material, such as aluminum oxide (Al₂O₃), silicon nitride (SiN_(x)), silicon oxide (SiO_(x)), titanium oxide (TiO_(x)), or magnesium fluoride (MgF_(x)).

Following the step of forming the third insulating layer, the manufacturing method of the light-emitting device 1 or the light-emitting device 2 comprises a step of forming a pad. As shown in the top view of FIG. 8, a first pad 80 a and a second pad 90 a can be formed on the one or more semiconductor structures 1000 a by plating, sputter or vapor deposition, and then patterned by lithography and etching. As the top view in FIG. 8 shows, the first pad 80 a is adjacent to one side of the substrate 11 a, for example, the right side, and the second pad 90 a is adjacent to another side of the substrate 11 a, for example, the left side. The first pad 80 a covers all of the first group of third insulating openings 701 a to contact the contact layer 60 a, and is electrically connected to the first semiconductor layer 101 a through the contact layer 60 a and the via 100 a. The second pad 90 a covers all the second group of third insulating openings 702 a to contact the reflective layer 40 a or the barrier layer 41 a, and is electrically connected to the second semiconductor layer 102 a through the reflective layer 40 a or the barrier layer 41 a. The first pad 80 a comprises one or more first pad openings 800 a, and a first side 802 a and a plurality of first recesses 804 a extending from the first side 802 a in a direction away from the second pad 90 a. The second pad 90 a comprises one or more second pad openings 900 a, and a second side 902 a and a plurality of second recesses 904 a extending from the second side 902 a in a direction away from the first pad 80 a. The positions of the first pad opening 800 a and the position of the second pad opening 900 a are substantially corresponding to the positions of the vias 100 a, and the positions of the first recess 804 a and the position of the second recess 904 a are substantially corresponding to the positions of the vias 100 a. In other words, the first pad 80 a and the second pad 90 a do not cover any via 100 a. The first pad 80 a and the second pad 90 a are formed to surround the via 100 a and are formed around the via 100 a. The first pad opening 800 a or the second pad opening 900 a comprises a diameter larger than that of any via 100 a and the first recess 804 a or the second recess 904 a comprises a width larger than the diameter of any via 100 a. In an embodiment of the present application, a plurality of first recesses 804 a is substantially aligned to a plurality of second recesses 904 a in a top view of the light-emitting device. In another embodiment of the present application, the plurality of first recesses 804 a is offset from the plurality of second recesses 904 a in the top view. In an embodiment of the present application, a shape of the first pad 80 a is same as or different from a shape of the second pad 90 a in the top view of the light-emitting device 1 or the light-emitting device 2.

FIG. 9A is a cross-sectional view taken along line A-A′ of FIG. 8, and FIG. 9B is a cross-sectional view taken along line B-B′ of FIG. 8. The light-emitting device 1 disclosed in the present embodiment is a flip chip type of light-emitting diode. The light-emitting device 1 comprises a substrate 11 a; one or more semiconductor structures 1000 a on the substrate 11 a; a surrounding part 111 a surrounding one or more semiconductor structures 1000 a; and a first pad 80 a and a second pad 90 a formed on one or more semiconductor structures 1000 a. Each of the one or more semiconductor structures 1000 a comprises a semiconductor stack 10 a comprising a first semiconductor layer 101 a, a second semiconductor layer 102 a, and an active layer 103 a between the first semiconductor layer 101 a and the second semiconductor layer 102 a. The multiple semiconductor structures 1000 a are connected to each other by the first semiconductor layer 101 a. As shown in FIG. 8, FIG. 9A, and FIG. 9B, the second semiconductor layer 102 a and the active layer 103 a around the one or more semiconductor structures 1000 a are removed to expose the first surface 1011 a of the first semiconductor layer 101 a. In other words, the surrounding part 111 a comprises a first surface 1011 a of the first semiconductor layer 101 a to surround the semiconductor structure 1000 a.

The light-emitting device 1 further comprises one or more vias 100 a passing through the second semiconductor layer 102 a and the active layer 103 a to expose one or more second surfaces 1012 a of the first semiconductor layer 101 a, and a contact layer 60 a formed on the first surface 1011 a of the first semiconductor layer 101 a to surround the semiconductor structure 1000 a and contact the first semiconductor layer 101 a to form an electrical connection. The contact layer 60 a is formed on the one or more second surfaces 1012 a of the first semiconductor layer 101 a to cover the one or multiple vias 100 a and contact the first semiconductor layer 101 a to form an electrical connection. In the present embodiment, as the top view of the light-emitting device 1 shows, the contact layer 60 a comprises a total surface area larger than a total surface area of the active layer 103 a, or the contact layer 60 a comprises a peripheral length larger than a peripheral length of the active layer 103 a.

In an embodiment of the present application, the first pad 80 a and/or the second pad 90 a cover the multiple semiconductor structures 1000 a.

In an embodiment of the present application, the first pad 80 a comprises one or more first pad openings 800 a and the second pad 90 a comprises one or more second pad openings 900 a. The first pad 80 a and the second pad 90 a are formed at positions other than a position of the via 100 a, and the positions of the first pad opening 800 a, the second pad opening 900 a, and the via 100 a are overlapping each other.

In an embodiment of the present application, as the top view of the light-emitting device 1 shows, the first pad 80 a comprises the same shape as that of the second pad 90 a, for example, the first pad 80 a and the second pad 90 a comprise comb shape As shown in FIG. 8, a curvature radius of the first pad opening 800 a of the first pad 80 a and a curvature radius of the first recess 804 a are respectively larger than a curvature radius of the via 100 a, and the first pad 80 a is formed at a region other than the positions of the multiple vias 100 a. A curvature radius of the second pad opening 900 a of the second pad 90 a and a curvature radius of the second recess 904 a are respectively larger than the curvature radius of the via 100 a, and the second pad 90 a is formed at a region other than the position of the multiple vias 100 a.

In one embodiment of the present application, as the top view of the light-emitting device 1 shows, the shape of the first pad 80 a is different from the shape of the second pad 90 a. For example, when the shape of the first pad 80 a is rectangular, the shape of the second pad 90 a is comb-shaped. The first pad 80 a comprises a first pad opening 800 a and the first pad 80 a is formed in a region other than the multiple vias 100 a. The second pad 90 a comprises the second recess 904 a and/or the second pad opening 900 a and the second pad 90 a is formed at a region other than the multiple vias 100 a.

In an embodiment of the present application, the size of the first pad 80 a is different from the size of the second pad 90 a, for example, the area of the first pad 80 a is larger than that of the second pad 90 a. The first pad 80 a and the second pad 90 a include one layer or multiple layers composed of metal material. The materials of the first pad 80 a and the second pad 90 a comprise metal materials, such as chromium (Cr), titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickle (Ni), platinum (Pt), or an alloy of the above materials. When the first pad 80 a and the second pad 90 a include multiple layers, the first pad 80 a comprises a first upper pad 805 a and a first lower pad 807 a, and the second pad 90 a comprises a second upper pad 905 a and a second lower pad 907 a. The upper pad and the lower pad have different functions. The function of the upper pad is used for soldering and wiring. The light-emitting device 1 can be flipped and mounted onto the package substrate by using solder bonding or AuSn eutectic bonding through the upper pad. The metal material of the upper pad comprises highly ductile materials such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), copper (Cu), gold (Au), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), or an alloy of the above materials. The upper pad includes one layer or multiple layers. In an embodiment of the present application, the material of the upper pad comprises nickel (Ni) or gold (Au), and the upper pad includes one layer or multiple layers. The function of the lower pad is for forming a stable interface with the contact layer 60 a, the reflective layer 40 a, or the barrier layer 41 a. For example, the lower pad improves the interface bonding strength between the first lower pad 807 a and the contact layer 60 a, or enhances the interface bonding strength between the second lower pad 907 a and the reflective layer 40 a or between the second lower pad 907 a and the barrier layer 41 a. Another function of the lower pad is to prevent tin (Sn) in the solder or AuSn from diffusing into the reflective structure that damages the reflectivity of the reflective structure. Therefore, the lower pad comprises a metal material other than gold (Au) and copper (Cu), such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), or an alloy of the above materials, the lower pad includes one layer or multiple layers. In an embodiment of the present application, the lower pad comprises multiple layers composed of titanium (Ti) and aluminum (Al), or multiple layers composed of chromium (Cr) and aluminum (Al).

In an embodiment of the present application, viewing from a cross-sectional aspect of the light-emitting device 1, a portion of the contact layer 60 a connected to the first semiconductor layer 101 a is formed under the second pad 90 a.

In an embodiment of the present application, viewing from a cross-sectional aspect of the light-emitting device 1, a portion of the contact layer 60 a connected to the first semiconductor layer 101 a is formed above the reflective layer 40 a and/or the barrier layer 41 a.

In an embodiment of the present application, as a top view of the light-emitting device 1 shows, the via 100 a comprises a maximum width smaller than a maximum width of the first pad opening 800 a; and/or the via 100 a comprises a maximum width smaller than a maximum width of the second pad opening 900 a.

In an embodiment of the present application, as a top view of the light-emitting device 1 shows, the multiple vias 100 a are respectively formed in the plurality of first recesses 804 a of the first pad 80 a and the plurality of second recesses 904 a of the second pad 90 a.

FIG. 10 is a cross-sectional view of a light-emitting device 2 according to an embodiment of the present application. As compared with the light-emitting device 1 in the above-described embodiment, the light-emitting device 2 further comprises a first buffer pad 810 a and a second buffer pad 910 a respectively under the first pad 80 a and the second pad 90 a. The light-emitting device 2 comprises the same structure as that of the light-emitting device 1, and therefore, the structure named by same terms or labelled by same numbers of the light-emitting device 1 in FIG. 9 and the light-emitting device 2 in FIG. 10 have the same structure, materials, or have the same function, which will be omitted in this embodiment or not repeat them in the following description. In the embodiment, the light-emitting device 2 comprises a first buffer pad 810 a formed between the first pad 80 a and the semiconductor stack 10 a and a second buffer pad 910 a formed between the second pad 90 a and the semiconductor stack 10 a, wherein the first buffer pad 810 a and the second buffer pad 910 a cover part or all of the vias 100 a. In the embodiment, when multiple insulating layers are formed between the pads 80 a, 90 a and the semiconductor stack 10 a, the stress is formed during the boning of the pads 80 a and 90 a of the light-emitting device 2 and the solder or AuSn eutectic, which causes cracks between the pads 80 a, 90 a and the insulating layer. The buffer pads 810 a, 910 a are respectively formed between the pads 80 a, 90 a and the third insulating layer 70 a, and the first buffer pad 810 a and the second buffer pad 910 a cover all the vias 100 a. The first pad 80 a and the second pad 90 a are formed in positions other than the positions of the vias 100 a. In other words, the first pad 80 a and the second pad 90 a do not cover the via 100 a. The material of the buffer pad is selected and the thickness of the pad is reduced to reduce the stress generated between the pad and the insulating layer.

In another embodiment of the present application, as shown in FIG. 10, from the top view of the light-emitting device 2, the shapes of the buffer pads 810 a, 910 a are respectively the same as those of the pads 80 a, 90 a. For example, the first buffer pad 810 a and the first pad 80 a are comb-shaped.

In an embodiment of the present application, from the top view of the light-emitting device 2 (nor shown), the shapes of the buffer pads 810 a, 910 a are different from those of the pads 80 a, 90 a. For example, the shape of the first buffer pad 810 a is rectangular and the shape of the first pad 80 a is comb.

In another embodiment of the present application, the sizes of the buffer pads 810 a, 910 a are respectively different from those of the pads 80 a, 90 a. For example, the area of the first buffer pad 810 a is larger than the area of the first pad 80 a and the area of the second buffer pad 910 a is larger than that of the second pad 90 a.

In another embodiment of the present application, a distance between the first pad 80 a and the second pad 90 a is larger than a distance between the first buffer pad 810 a and the second buffer pad 910 a.

In another embodiment of the present application, the buffer pads 810 a, 910 a comprise a larger area than that of the pads 80 a, 90 a to release the stress of the pads 80 a, 90 a during the bonding. In a cross-sectional view of the light-emitting device 2, the first buffer pad 810 a comprises a width 1.5 to 2.5 times, preferably 2 times the width of the first pad 80 a.

In another embodiment of the present application, the buffer pads 810 a, 910 a respectively comprises an area larger than that of the pads 80 a, 90 a to release the stress of the pads 80 a, 90 a during the bonding. In a cross-sectional view of the light-emitting device 2, the first buffer pad 810 a comprises a distance extending outside an edge of the first pad 80 a, which is more than one times the thickness of the first buffer pad 810 a, preferably more than two times the thickness of the first buffer pad 810 a.

In another embodiment of the present application, the pads 80 a, 90 a comprise a thickness between 1μm and 100 p.m, preferably between 2 μm and 6 μm. Each of the buffer pads 810 a, 910 a comprises a thickness larger than 0.5 μm to release the stress of the bond pads 80 a, 90 a during bonding.

In another embodiment of the present application, each of the first buffer pad 810 a and the second buffer pad 910 a includes one layer or multiple layers composed of a metal material. The first buffer 810 a and the second buffer 910 a function as a stable interface with the contact layer 60 a, the reflective layer 40 a, or the barrier layer 41 a. For example, the first buffer pad 810 a contacts the contact layer 60 a, and the second buffer pad 910 a contacts the reflective layer 40 a or the barrier layer 41 a. The buffer pads 810 a, 910 a comprise metal materials other than gold (Au) and copper (Cu), such as chromium (Cr), nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), tungsten(W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru) or osmium (Os) to prevent tin (Sn) in the solder or AuSn eutectic from diffusing into the light-emitting device.

In another embodiment of the present application, the first buffer pad 810 a and/or the second buffer pad 910 a includes multiple layers composed of metal materials, wherein the multiple layers comprises a high ductility layer and a low ductility layer to prevent the stress formed in the bonding between the pads 80 a, 90 a and the solder or AuSn from causing cracks in the insulating layer between the pads 80 a, 90 a and the semiconductor stack 10 a. The high ductility layer and the low ductility layer comprise metals having different Young's modulus.

In another embodiment of the present application, the high ductility layers of the first buffer pad 810 a and the second buffer pad 910 a comprise a thickness larger than or equal to a thickness of the low ductility layers of the first buffer pad 810 a and the second buffer pad 910 a.

In another embodiment of the present application, the first buffer pad 810 a and the second buffer pad 910 a comprise multiple layers composed of a metal material. When the first buffer pad 80 a and the second buffer pad 90 a comprise multiple layers composed of metal material, one side of the first buffer pad 810 a and one side of the first pad 80 a contacting each other comprise same metal material, one side of the second buffer pad 910 a and one side of the second pad 90 a contacting each other comprise same metal material, such as chromium (Cr), nickel (Ni), titanium (Ti), or platinum (Pt) to improve the interface bonding strength between the pad and the buffer pad.

As shown in FIG. 11A and FIG. 11B, a fourth insulating layer 110 a can be formed on the first buffer pad 810 a and the second buffer pad 910 a by sputter or vapor deposition and patterned by lithography and etching. The first pad 80 a and the second pad 90 a are respectively formed on the first buffer pad 810 a and the second buffer pad 910 a by the above described method, wherein the fourth insulating layer 110 a surrounds sidewalls of the first buffer pad 810 a and the second buffer pad 910 a. The fourth insulating layer 110 a includes one layer or multiple layers. When the fourth insulating layer 110 a includes multiple layers, the fourth insulating layer 110 a comprises two or more layers having different refractive indexes alternately stacked to form a Distributed Bragg reflector (DBR) which can selectively reflect light of a specific wavelength. The material of the fourth insulating layer 110 a comprises nonconductive material comprising organic materials, such as Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, or inorganic material, such as silicone, glass, or dielectric material, such as aluminum oxide (Al₂O₃), silicon nitride (SiN_(x)), silicon oxide (SiO_(x)), titanium oxide (TiO_(x)), or magnesium fluoride (MgF_(x)).

In an embodiment of the present application, the manufacturing process of the first pad 80 a and the second pad 90 a directly follows the manufacturing process of the first buffer pad 810 a and the second buffer pad 910 a. In another embodiment of the present application, after the manufacturing process of the first buffer pad 810 a and the second buffer pad 910 a, the step of forming the fourth insulating layer 110 a is performed first and the manufacturing process of the first pad 80 a and the second pad 90 a follows the fourth insulating layer 110 a.

FIGS. 12A-22 illustrate a manufacturing method of a light-emitting device 3 or a light-emitting device 4 in accordance with embodiments of the present application.

As shown in a top view of FIG. 12A and a cross-sectional view of FIG. 12B which is taken along line A-A′ of FIG. 12A, a manufacturing method of a light-emitting device 3 or a light-emitting device 4 comprises a step of forming a mesa, which includes providing a substrate 11 b and forming a semiconductor stack 10 b on the substrate 11 b, wherein the semiconductor stack 10 b comprises a first semiconductor layer 101 b, a second semiconductor layer 102 b, and an active layer 103 b between the first semiconductor layer 101 a and the second semiconductor layer 102 a. The semiconductor stack 10 b can be patterned by lithography and etching to remove a portion of the second semiconductor layer 102 b and the active layer 103 b to form one or multiple semiconductor structures 1000 b, and form a surrounding part 111 b surrounding the one or multiple semiconductor structures 1000 b. The surrounding part 111 b exposes a first surface 1011 b of the first semiconductor layer 101 b. The one or multiple semiconductor structures 1000 b comprises a first outside wall 1003 b, a second outside wall 1001 b, and an inside wall 1002 b, wherein the first outside wall 1003 b is a sidewall of the first semiconductor layer 101 b, the second outside wall 1001 b is a sidewall of the active layer 103 b and/or a sidewall of the second semiconductor layer 102 b. One end of the second outside wall 1001 b is connected to a surface 102 s of the second semiconductor layer 102 b and another end of the second outside wall 1001 b is connected to the first surface 1011 b of the first semiconductor layer 101 b. One end of the inside wall 1002 b is connected to the surface 102 s of the second semiconductor layer 102 b and another end of the inside wall 1002 b is connected to a second surface 1012 b of the first semiconductor layer 101 b. The multiple semiconductor structures 1000 b are connected to each other through the first semiconductor layer 101 b. As shown in FIG. 12B, an obtuse angle is formed between the inside wall 1002 b of the semiconductor structure 1000 b and the second surface 1012 b of the first semiconductor layer 101 b. An obtuse angle or a right angle is formed between the first outside wall 1003 b of the semiconductor structure 1000 b and a surface list of the substrate 11 b. An obtuse angle is formed between the second outside wall 1001 b of the semiconductor structure 1000 a and the first surface 1011 b of the first semiconductor layer 101 b. The surrounding part 111 b surrounds the semiconductor structure 1000 b and the top view of the surrounding part 111 b is a rectangular or a polygonal shape.

In an embodiment of the present application, the light-emitting device 3 or the light-emitting device 4 comprises a side less than 30 mil. When an external current is injected into the light-emitting device 3 or the light-emitting device 4, the surrounding part 111 b surrounds the semiconductor structure 1000 b to distribute the light field of the light-emitting device 3 or the light-emitting device 4 uniformly and reduce the forward voltage of the light-emitting device.

In an embodiment of the present application, the light-emitting device 3 or the light-emitting device 4 comprises a side larger than 30 mil. The semiconductor stack 10 b can be patterned by lithography and etching to remove a portion of the second semiconductor layer 102 b and the active layer 103 b to form one or multiple vias 100 a penetrating through the second semiconductor layer 102 b and the active layer 103 b, wherein the one or multiple vias 100 a expose one or more second surface 1012 b of the first semiconductor layer 101 b. When an external current is injected into the light-emitting device 3 or the light-emitting device 4, the surrounding part 111 a and the multiple vias 100 b are dispersedly disposed to distribute the light field of the light-emitting device 3 or the light-emitting device 4 uniformly and reduce the forward voltage of the light-emitting device.

In an embodiment of the present application, the one or multiple vias 100 b comprises an opening having a shape, such as circular, ellipsoidal, rectangular, polygonal, or any shape. The multiple vias 100 b are arranged into a plurality of rows and the vias 100 b of adjacent two rows can be aligned with each other or staggered.

In an embodiment of the present application, the substrate 11 b can be a growth substrate, for example, a gallium arsenide (GaAs) wafer for growing aluminum gallium indium phosphide (AlGaInP) or a sapphire (Al₂O₃) wafer, gallium nitride (GaN) wafer, or silicon carbide (SiC) wafer for growing indium gallium nitride (InGaN). The semiconductor stack 10 b comprises optical characteristics, such as light-emitting angle or wavelength distribution, and electrical characteristics, such as forward voltage or reverse current. The semiconductor stack 10 a can be formed on the substrate 11 b by organic metal chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), or ion plating.

In an embodiment of the present application, the first semiconductor layer 101 b and the second semiconductor layer 102 b, such as a cladding layer or a confinement layer, have different conductivity types, electrical properties, polarities, or doping elements for providing electrons or holes. For example, the first semiconductor layer 101 b is an n-type semiconductor and the second semiconductor layer 102 b is a p-type semiconductor. The active layer 103 b is formed between the first semiconductor layer 101 b and the second semiconductor layer 102 b. The electrons and holes combine in the active layer 103 b under a current driving to convert electric energy into light energy to emit a light. The wavelength of the light emitted from the light-emitting device 3 or the light-emitting device 4 is adjusted by changing the physical and chemical composition of one or more layers in the semiconductor stack 10 b. The material of the semiconductor stack 10 b comprises a group III-V semiconductor material, such as Al_(x)In_(y)Ga_((1-x-y))N or Al_(x)In_(y)Ga_((1-x-y))P, wherein 0≤x, y≤1; (x+y)≤1. According to the material of the active layer 103 b, when the material of the semiconductor stack 10 b is AlInGaP series material, red light having a wavelength between 610 nm and 650 nm or yellow light having a wavelength between 550 nm and 570 nm can be emitted. When the material of the semiconductor stack 10 b is InGaN series material, blue light having a wavelength between 450 nm and 490 nm or green light having a wavelength between 490 nm and 550 nm can be emitted. When the material of the semiconductor stack 10 b is AlGaN series material, UV light having a wavelength between 400 nm and 250 nm can be emitted. The active layer 103 a can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), a multi-quantum well structure (MQW). The material of the active layer 103 b can be i-type, p-type, or n-type semiconductor.

Following the step of forming the mesa, as a top view of FIG. 13A and a cross-sectional view of FIG. 13B which is taken along line A-A′ of FIG. 13A show, the manufacturing method of the light-emitting device 3 or the light-emitting device 4 comprises a step of forming a first insulating layer. A first insulating layer 20 b can be formed on the semiconductor structure 1000 b by sputter or vapor deposition, and patterned by lithography and etching to cover the first surface 1011 b of the surrounding part 111 b and the second surface 1012 b of the via 100 b, and cover the second outside wall 1001 b of the second semiconductor layer 102 b and the active layer 103 b of the semiconductor structure 1000 b and the inside wall 1002 b of the semiconductor structure 1000 b. The first insulating layer 20 b comprises a first insulating surrounding region 200 b covering the surrounding part 111 b, thereby the first surface 1011 b of the first semiconductor layer 101 b on the surrounding part 111 b is covered by the first insulating surrounding region 200 b; a first group of first insulating covering regions 201 b covering the vias 100 b, thereby the second surfaces 1012 b of the first semiconductor layer 101 b on the via 100 b are covered by the first group of first insulating covering regions 201 b; and a second group of first insulating openings 202 b exposing the surface 102 s of the second semiconductor layer 102 b. The first group of first insulating covering regions 201 b is separated from each other and is respectively corresponding to the multiple vias 100 b. The first insulating layer 20 b includes one layer or multiple layers. When the first insulating layer 20 b includes one layer, the first insulating layer 20 b protects the sidewall of the semiconductor structure 1000 b to prevent the active layer 103 b from being destroyed by the following processes. When the first insulating layer 20 b includes multiple layers, the first insulating layer 20 b comprises two or more layers having different refractive indexes alternately stacked to form a Distributed Bragg reflector (DBR) which can selectively reflect light of a specific wavelength. The first insulating layer 20 b is composed of a non-conductive material comprising organic material, such as Sub, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, or inorganic material, such as silicone, glass, or dielectric material, such as aluminum oxide (Al₂O₃), silicon nitride (SiN_(x)), silicon oxide (SiO_(x)), titanium oxide (TiO_(x)), or magnesium fluoride (MgF_(x)).

In an embodiment of the present application, following the step of forming the first insulating layer, as a top view in FIG. 14A and a cross-sectional view in FIG. 14B which is taken along line A-A′ of FIG. 14A show, the manufacturing method of the light-emitting device 3 or the light-emitting device 4 comprises a step of forming a transparent conductive layer. A transparent conductive layer 30 a can be formed on the semiconductor structure 1000 b by sputter, vapor deposition or the like, and contacts the second semiconductor layer 102 b, wherein the transparent conductive layer 30 a does not cover the via 100 b. As the top view of the light-emitting device 3 or the light-emitting device 4 shows, the transparent conductive layer 30 b is substantially formed on the entire surface of the second semiconductor layer 102 b. Specifically, the transparent conductive layer 30 b can be formed in the second group of first insulating openings 202 b by sputter, vapor deposition or the like, wherein an outer edge 301 b of the transparent conductive layer 30 b is spaced apart from the first insulating layer 20 b with a distance to expose the surface 102 s of the second semiconductor layer 102 b. The transparent conductive layer 30 b comprises one or multiple transparent conductive layer openings 300 b respectively corresponding to the one or multiple vias and/or the first group of first insulating covering regions 201 b, wherein the outer edge 301 b of the transparent conductive layer openings 300 b is separated from the inside wall 1002 b of the semiconductor structure 1000 b and/or an outer edge of the via 100 b with a distance and the outer edge of the transparent conductive layer openings 300 b surrounds the outer edge of the via 100 b or the first group of first insulating covering regions 201 b. The material of the transparent conductive layer 30 b comprises a material transparent to the light emitted from the active layer 103 b, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

In another embodiment of the present application, after the step of forming the mesa, the step of forming the transparent conductive layer can be performed first and is followed by the step of forming the first insulating layer.

In another embodiment of the present application, after the step of forming the mesa, the step of forming the first insulating layer can be omitted so the step of forming the transparent conductive layer can be directly performed.

In an embodiment of the present application, following the step of forming the transparent conductive layer, as a top view in FIG. 15A and a cross-sectional view in FIG. 15B which is taken along line A-A′ of FIG. 15A show, the manufacturing method of the light-emitting device 3 or the light-emitting device 4 comprises a step of forming a reflective structure. The reflective structure comprises a reflective layer 40 b and/or a barrier layer 41 b, which can be directly formed on the transparent conductive layer 30 b by sputter, vapor deposition, or the like, wherein the reflective layer 40 b is formed between the transparent conductive layer 30 b and the barrier layer 41 b. As the top view of the light-emitting device 3 or the light-emitting device 4 shows, the reflective layer 40 b and/or the barrier layer 41 b is substantially formed on the entire surface of the second semiconductor layer 102 b. An outer edge 401 b of the reflective layer 40 b may be disposed on the inner side or the outer side of the outer edge 301 b of the transparent conductive layer 30 b, or may be disposed to overlap with the outer edge 301 b of the transparent conductive layer 30 b. The outer edge 411 b of the barrier layer 41 b can be disposed on the inner side or the outer side of the outer edge 401 b of the reflective layer 40 b or provided to overlap with the outer edge 401 b of the reflective layer 40 b. The reflective layer 40 b comprises one or multiple reflective layer openings 400 b respectively corresponding to the one or multiple vias 100 b. The barrier layer 41 b comprises one or multiple barrier layer openings 410 b respectively corresponding to the one or multiple vias 100 b. The transparent conductive layer openings 300 b, the reflective layer opening 400 b, and the barrier layer opening 410 b overlap each other. An outer edge of the reflective layer opening 400 b and/or an outer edge of the barrier layer opening 410 b are separated from an outer edge of the via 100 b with a distance, and the outer edge of the reflective layer opening 400 b and/or the outer edge of the barrier layer opening 410 b surround the outer edge of the via 100 b.

In another embodiment of the present application, the step of forming the transparent conductive layer can be omitted, and the step of forming the reflective structure is directly performed after the step of forming the mesa or the step of forming the first insulating layer. For example, the reflective layer 40 b and/or the barrier layer 41 b is directly formed on the second semiconductor layer 102 b and the reflective layer 40 b is formed between the second semiconductor layer 102 b and the barrier layer 41 b. The reflective layer 40 b includes one layer or multiple layers, such as a Distributed Bragg reflector (DBR). The material of the reflective layer 40 b comprises a metal material having a high reflectance, for example, silver (Ag), aluminum (Al), or rhodium (Rh), or an alloy of the above materials. The high reflectance referred to herein means having 80% or more reflectance for a wavelength of a light emitted from the light-emitting device 3 or the light-emitting device 4. In an embodiment of the present application, the barrier layer 41 b covers the reflective layer 40 b to prevent the surface of the reflective layer 40 b from being oxidized that deteriorates the reflectivity of the reflective layer 40 b. The material of the barrier layer 41 b comprises metal material, such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or an alloy of the above materials. The barrier layer 41 b includes one layer or multiple layers, such as titanium (Ti)/aluminum (Al) and/or titanium (Ti)/tungsten (W). In an embodiment of the present application, the barrier layer 41 b comprises titanium (Ti)/aluminum (Al) on one side away from the reflective layer 40 b and titanium (Ti)/tungsten (W) on another side adjacent to the reflective layer 40 b. In an embodiment of the present application, the material of the reflective layer 40 b and the barrier layer 41 b comprises a metal material other than gold (Au) or copper (Cu).

In an embodiment of the present application, following the step of forming the reflective structure, as a top view in FIG. 16A, and a cross-sectional view in FIG. 16B which is taken along line A-A′ of FIG. 16A show, the manufacturing method of the light-emitting device 3 or the light-emitting device 4 comprises a step of forming a second insulating layer. A second insulating layer 50 b can be formed on the semiconductor stack 10 b by sputter or vapor deposition, etc., and then patterned by lithography and etching to form a first group of second insulating openings 501 b to expose the first semiconductor layer 101 b and a second group of second insulating openings 502 b to expose the reflective layer 40 b or the barrier layer 41 b. During the patterning of the second insulating layer 50 b, the first insulating surrounding region 200 b which covers the surrounding part 111 b and the first group of first insulating covering regions 201 b which covers the vias 100 b are partially etched and a first group of first insulating openings 203 b is formed in the vias 100 b to expose the first semiconductor layer 101 b. In an embodiment of the present application, as shown in FIG. 16A, the first group of second insulating openings 501 b are separated from each other and respectively corresponding to the multiple vias 100 b. The second group of second insulating openings 502 b is close to one side of the substrate 11 b, for example, the left side or the right side of the substrate 11 b. In an embodiment, a number of the second group of second insulating openings 502 b comprises one or more. In the embodiment, the second group of second insulating openings 502 b is connected to each other to form an annular opening 5020 b. The shape of the annular opening 5020 b comprises comb, rectangle, ellipse, circle, or polygon viewing from the top of the light-emitting device 3. In an embodiment of the present application, the second insulating layer 50 b includes one layer or multiple layers. When the second insulating layer 50 b includes multiple layers, the second insulating layer 50 b comprises two or more layers having different refractive index alternately stacked to form a Distributed Bragg reflector (DBR) which can selectively reflect light of a specific wavelength. The second insulating layer 50 b is composed of a non-conductive material comprising organic material, such as Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, or inorganic material, such as silicone, glass, or dielectric material, such as aluminum oxide (Al₂O₃), silicon nitride (SiN_(x)), silicon oxide (SiO_(x)), titanium oxide (TiO_(x)), or magnesium fluoride (MgFA_(x)).

Following the step of forming the second insulating layer, in an embodiment of the present application, as a top view of FIG. 17A and a cross-sectional view in FIG. 17B show, the manufacturing method of the light-emitting device 3 or the light-emitting device 4 comprises a step of forming a contact layer. A contact layer 60 b can be formed on the semiconductor stack 10 b by sputter or vapor deposition, etc., and then patterned by photolithography and etching to form a first contact layer 601 b and a second contact layer 602 b. The first contact layer 601 b covers all the first group of second insulating openings 501 b, fills into the one or multiple vias 100 b to contact with the first semiconductor layer 101 b, and extends over the second insulating layer 50 b and the second semiconductor layer 102 b, wherein the first contact layer 601 b is insulated from the second semiconductor layer 102 b by the second insulating layer 50 b. The second contact layer 602 b is formed in the annular opening 5020 b of the second insulating layer 50 b to contact the reflective layer 40 b and/or the barrier layer 41 b, wherein the sidewall 6021 b of the second contact layer 602 b and the sidewall 5021 b of the annular opening 5020 b are separated with a distance. The sidewall 6011 b of the first contact layer 601 b is separated from the sidewall 6021 b of the second contact layer 602 b with a distance. The first contact layer 601 b does not contact the second contact layer 602 b and the first contact layer 601 b and the second contact layer 602 b are electrically isolated by part of the second insulating layer 50 b. In the top view, the first contact layer 601 b covers the surrounding part 111 b of the semiconductor stack 10 b such that the first contact layer 601 b surrounds the second contact layer 602 b. In the top view of FIG. 17A, the second contact layer 602 b is close to one side of the substrate 11 b, for example, the left or right side of the substrate 11 b. The contact layer 60 b defines a pin region 600 b at the geometric center in the top view of the semiconductor stack 10 b. The pin region 600 b does not contact the first contact layer 601 b and the second contact layer 602 b and is electrically isolated from the first contact layer 601 b and the second contact layer 602 b. The pin region 600 b comprises the same material as that of the first contact layer 601 b and/or the second contact layer 602 b. The pin region 600 b serves as a structure for protecting the epitaxial stack to prevent the epitaxial stack from being damaged in the post process, such as die separation, die testing, or encapsulation. The contact layer 60 b includes one layer or multiple layers. In order to reduce the resistance contacting the first semiconductor layer 101 b, the material of the contact layer 60 b comprises a metal material, such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickle (Ni), platinum (Pt), or an alloy of the above materials. In one embodiment of the application, the material of the contact layer 60 b comprises a metal material other than gold (Au), copper (Cu). In an embodiment of the present application, the material of the contact layer 60 b comprises a metal having high reflectivity, such as aluminum (Al) or platinum (Pt). In an embodiment of the present application, one side of the contact layer 60 b contacting with the first semiconductor layer 101 b comprises chromium (Cr) or titanium (Ti) to increase the bonding strength joining the first semiconductor layer 101 b.

In an embodiment of the present application, follow the contact layer forming step of FIG. 17A and FIG. 17B, the manufacturing method of the light-emitting device 3 or the light-emitting device 4 comprises a step of forming a third insulating layer. As a top view in FIG. 18A and a cross-sectional view in FIG. 18B which is taken along line A-A′ of FIG. 18A show, a third insulating layer 70 b can be formed on the semiconductor stack 10 b by sputter or vapor deposition, etc., and then patterned by lithography and etching to form a first third insulating opening 701 b on the first contact layer 601 b to expose the first contact layer 601 b shown in FIG. 17A and form a second third insulating opening 702 b to expose the second contact layer 602 b shown in FIG. 17A, wherein part of the first contact layer 601 b formed on the second semiconductor layer 102 b is interposed between the second insulating layer 50 b and the third insulating layer 70 b. In the present embodiment, as shown in FIG. 18A, the first third insulating opening 701 b and the second third insulating opening 702 b are around the one or multiple vias 100 b. In the present embodiment, the first third insulating opening 701 b and/or the second third insulating opening 702 b is an annular opening and the shape of the annular opening comprises comb, rectangular, oval, circular, or polygon viewing from the top. In the top view of FIG. 18A, the first third insulating opening 701 b is close to one side of the substrate 11 b, for example, the right side of the substrate 11 b. The second third insulating opening 702 b is close to another side of the substrate 11 b, for example, the left side of the substrate 11 b. In the cross-sectional view, the first third insulating opening 701 b comprises a width larger than a width of the second third insulating opening 702 b. The first third insulating layer 70 b includes one layer or multiple layers. When the third insulating layer 70 b includes multiple layers, the third insulating layer 70 b comprises two or more layers having different refractive index alternately stacked to form a Distributed Bragg reflector (DBR) which can selectively reflect light of a specific wavelength. The third insulating layer 70 b is composed of a non-conductive material comprising organic material, such as Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, or inorganic material, such as silicone, glass, or dielectric material, such as aluminum oxide (Al₂O₃), silicon nitride (SiN_(x)), silicon oxide (SiO_(x)), titanium oxide (TiO_(x)), or magnesium fluoride (MgF_(x)).

Following the step of forming the third insulating layer, the manufacturing method of the light-emitting device 3 or the light-emitting device 4 comprises a step of forming a pad. As shown in the top view of FIG. 19, a first pad 80 a and a second pad 90 a can be formed on the semiconductor stack 10 b by plating, sputter or vapor deposition and then patterned by lithography and etching. As the top view in FIG. 19 shows, the first pad 80 b is adjacent to one side of the substrate 11 a, for example, the right side, and the second pad 90 b is adjacent to another side of the substrate 11 b, for example, the left side. The first pad 80 b contacts the first contact layer 601 b through the first third insulating opening 701 b and is electrically connected to the first semiconductor layer 101 b through the first contact layer 601 b. The second pad 90 b contacts the reflective layer 40 b and/or the barrier layer 41 b and is electrically connected to the second semiconductor layer 102 b through the reflective layer 40 b and/or the barrier layer 41 b. The first pad 80 b comprises a plurality of first protrusions 801 b and a plurality of first recesses 802 b alternately connected to each other. The second pad 90 b comprises a plurality of second protrusions 901 b and a plurality of second recesses 902 b alternately connected to each other. The position of the first recess 802 b of the first pad 80 b and the position of the second recess 902 b of the second pad 90 b substantially correspond to the positions of the vias 100 b. In other words, the first pad 801 b and the second pad 802 b do not cover any of the vias 100 b, the first recess 802 b of the first pad 80 b, and the second recess 902 b of the second pad 90 b surround the via 100 b, and are formed around the via 100 b such that the width of the first recess 802 b of the first pad 80 b or the width of the second recess 902 b of the second pad 90 b is larger than the diameter of any via100 b. In an embodiment of the present application, the plurality of first recesses 802 b is substantially aligned with the plurality of second recesses 902 b in the top view. In another embodiment of the present application, the plurality of first recesses 802 b is offset from the plurality of second recesses 902 b in the top view.

In an embodiment of the present application, as shown in FIG. 19, the first pad 80 b covers the first third insulating opening 701 b and the second pad 90 b covers the second third insulating opening 702 b. Since the first third insulating layer opening 701 b comprises a maximum width greater than a maximum width of the second third insulating opening 702 b, the first pad 80 b comprises a maximum width greater than a maximum width of the second pad 90 b. The first pad 80 b and the second pad 90 b comprise different sizes for the identification of the electrical connection of the pad and the solder pad during soldering to avoid the occurrence of bonding to the wrong electrical pad.

In an embodiment of the present application, the first third insulating opening 701 b comprises an area larger or smaller than an area of the first pad 80 b in the top view of the light-emitting device.

In another embodiment of the present application, a shortest distance between the first protrusion 801 b and the second protrusion 901 b is smaller than a maximum distance between the first recess 802 b and the second recess 902 b.

In a another embodiment of the present application, the first pad 80 b comprises a first flat edge 803 b opposite to the first protrusion 801 b and the first recess 802 b, and the second pad 90 b comprises a second flat edge 903 b opposite to the second protrusion 901 b and the second recess 902 b. A maximum distance between the first flat edge 803 b of the first pad 80 b and the first protrusion 801 b is larger than a shortest distance between the first protrusion 801 b and the second protrusion 901 b. A maximum distance between the second flat edge 903 b of the second pad 90 b and the second protrusion 901 b is larger than a shortest distance between the first protrusion 801 b and the second protrusion 901 b.

In another embodiment of the present application, the curvature radius of the first plurality of first recesses 802 b of the first pad 80 b is different from the curvature radius of the plurality of first protrusions 801 b of the first pad 80 b. For example, the curvature radius of the plurality of first recesses 802 b of the first pad 80 b is larger or smaller than the curvature radius of the plurality of first protrusions 801 b of the first pad 80 b. In another embodiment of the application, the curvature radius of the plurality of second recesses 902 b of the second pad 90 b is larger or less than the curvature radius of the plurality of second protrusions 901 b of the second pad 90 b.

In another embodiment of the present application, the curvature radius of the first protrusions 801 b of the first pad 80 b is larger or less than the curvature radius of the second protrusions 901 b of the second pad 90 b.

In another embodiment of the present application, the plurality of first recesses 802 b of the first pad 80 b faces the plurality of second recesses 902 b of the second pad 90 b and the curvature radius of the plurality of first recesses 802 b is larger or less than the curvature radius of the plurality of second recesses 902 b.

In another embodiment of the present application, the first pad 80 b comprises a shape different from a shape of the second pad 90 b, for example, the first pad 80 b comprises a rectangular shape, and the second pad 90 b comprises a comb shape.

In another embodiment of the present application, the first pad 80 b comprises a size different from a size of the second pad 90 b, for example, the first pad 80 b comprises an area larger than an area of the second pad 90 b.

FIG. 20 is a cross-sectional view taken along line A-A′ of FIG. 19. In accordance with the embodiment, the light-emitting device 3 is a flip-chip type of light-emitting diode. The light-emitting deice 3 comprises a substrate 11 b and one or multiple semiconductor structures 1000 b on the substrate 11 b, wherein the semiconductor structure 1000 b comprises a semiconductor stack 10 b having a first semiconductor layer 101 b, a second semiconductor layer 102 b, and an active layer 103 b between the first semiconductor layer 101 b and the second semiconductor layer 102 b. The multiple semiconductor structures 1000 b are connected to each other through the first semiconductor layer 101 b. The light-emitting deice 3 also comprises a surrounding part 111 b surrounding the one or multiple semiconductor structures 1000 b and a first pad 80 b and a second pad 90 b formed on the one or multiple semiconductor structures 1000 b, wherein the surrounding part 111 b exposes a first surface 1011 b of the first semiconductor layer 101 b. As shown in FIG. 19 and FIG. 20, the one or multiple semiconductor structures 1000 b respectively comprises a plurality of outside walls 1001 b and a plurality of inside walls 1002 b. One end of the outside wall 1001 b is connected to a surface 102 s of the second semiconductor layer 102 b and another end of the outside wall 1001 b is connected to the first surface 1011 b of the first semiconductor layer 101 b. One end of the inside wall 1002 b is connected to the surface 102 s of the second semiconductor layer 102 b and another end of the inside wall 1002 b is connected to a second surface 1012 b of the first semiconductor layer 101 b.

In an embodiment of the present application, the light-emitting device 3 comprises a side larger than 30 mil and further comprises one or multiple vias penetrating through second semiconductor layer 102 b and the active layer 103 b to expose one or more second surfaces 1012 b. The light-emitting device 3 also comprises a contact layer 60 b formed on the first surface 1011 b of the first semiconductor layer 101 b to surround the one or multiple semiconductor structures 1000 b and contact the first semiconductor layer 101 b for forming electrical connection, and the contact layer 60 b is formed on the one or more second surfaces 1012 b of the first semiconductor layer 101 b to cover the one or multiple vias 100 b and contact the first semiconductor layer 101 b for forming electrical connection. The contact layer 60 b comprises a first contact layer 601 b and a second contact layer 602 b. The first contact layer 601 b is formed on the second semiconductor layer, surrounds a sidewall of the second semiconductor layer, and is connected to the first semiconductor layer. The second contact layer 602 b is formed on the second semiconductor layer and connected to the second semiconductor layer. The second contact layer 602 b is surrounded by the first contact layer 601 b while the first contact layer 601 b and the second contact layer 602 b do not overlap each other.

In an embodiment of the present application, the light-emitting device 3 does not comprise any via 100 b in order to increase the light-emitting area.

In an embodiment of the present application, the contact layer 60 b comprises a total surface area larger than a total surface area of the active layer 103 b in the top view of the light-emitting device 3.

In an embodiment of the present application, a total length of a periphery of the contact layer 60 b is larger than a total length of a periphery of the active layer 103 b in the top view of the light-emitting device 3.

In an embodiment of the present application, the first contact layer 601 b comprises an area larger than an area of the second contact layer 602 b in the top view of the light-emitting device 3.

In an embodiment of the present application, the first pad 80 b and the second pad 90 b are formed in positions outside the via 100 b. In other words, the via 100 b is not covered by the first pad 80 b or the second pad 90 b.

In an embodiment of the present application, the first contact layer 601 b connected to the first semiconductor layer 101 b is not disposed under the second pad 90 b viewing from the cross-section of the light-emitting device 3.

In an embodiment of the present application, a shortest distance between the first pad 80 b and the second pad 90 b is larger than 50 μm.

In an embodiment of the present application, a distance between the first pad 80 b and the second pad 90 b is smaller than 300 μm.

In an embodiment of the present application, the first pad 80 b and the second pad 90 b comprise a structure having one or more layers comprising a metal material. The materials of the first pad 80 b and the second pad 90 b comprise metal materials, such as chromium (Cr), titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickle (Ni), platinum (Pt), or an alloy of the above materials. When the first pad 80 b and the second pad 90 b include multiple layers, the first pad 80 b comprises a first lower pad (not shown) and a first upper pad (not shown), and the second pad 90 b comprises a second lower pad (not shown) and a second upper pad (not shown). The upper pad and the lower pad have different functions. The function of the upper pad is used for soldering and wiring. The light-emitting device 3 is flipped and mounted onto the package substrate by using solder bonding or AuSn eutectic bonding through the upper pad. The metal material of the upper pad comprises highly ductile materials such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), copper (Cu), gold (Au), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), or an alloy of the above materials. The upper pad includes one layer or multiple layers. In an embodiment of the present application, the material of the upper pad comprises nickel (Ni) and/or gold (Au) and the upper pad includes one layer or multiple layers. The function of the lower pad is for forming a stable interface with the contact layer 60 b, the reflective layer 40 b, or the barrier layer 41 b, for example, to improve the interface bonding strength between the first lower pad and the contact layer 60 b, to enhance the interface bonding strength of the second lower pad and the reflective layer 40 b, or to enhance the interface bonding strength of the second lower pad and the barrier layer 41 b. Another function of the lower pad is to prevent tin (Sn) in the solder or AuSn from diffusing into the reflective structure and damaging the reflectivity of the reflective structure. Therefore, the lower pad comprises a metal material other than gold (Au) and copper (Cu), such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), or osmium (Os), and the lower pad includes one layer or multiple layers. In an embodiment of the present application, the lower pad comprises multiple layers comprising titanium (Ti) and aluminum (Al), or chromium (Cr) and aluminum (Al).

In an embodiment of the present application, when the light-emitting device 3 is mounted on the package substrate in the form of flip-chip by means of a solder, a height difference H is between the first pad 80 b and the second pad 90 b. As shown in FIG. 20, the second insulating layer 50 b under the first pad 80 b covers the reflective layer 40 b and the second insulating layer 50 b under the second pad 90 b comprises the second insulating opening 502 b to expose the reflective layer 40 b or the barrier layer 41 b. When the first pad 80 b and the second pad 90 b are respectively formed in the first third insulating opening 701 b and the second third insulating opening 702 b, the most top surface 80 s of the first pad 80 b is higher than the most top surface 90 s of the second pad 90 b. In other words, the height difference H is between the most top surface 80 s of the first pad 80 b and the most top surface 90 s of the second pad 90 b, and the height difference H between the first pad 80 b and the second pad 90 b is substantially the same as the thickness of the second insulating layer 50 b. In an embodiment, the height difference between the first pad 80 b and the second pad 90 b is between 0.5 μm and 2.5 μm. For example, the height difference between the first pad 80 b and the second pad 90 b is 1.5 p.m. When the first pad 80 b and the second pad 90 b are respectively formed in the first third insulating layer opening 701 b and the second third insulating layer opening 702 b, the first pad 80 b contacts the first contact layer 601 b through the first third insulating pad opening 701 b and extends over partial surface of the second insulating layer 70 b from the first third insulating pad opening 701 b. The second pad 90 b contacts the second contact layer 601 b through the second third insulating opening 702 b and extends over partial surface of the third insulating layer 70 b from the second third insulating opening 702 b.

FIG. 21 illustrates a top view of the light-emitting device 4 in accordance with an embodiment of the present application. FIG.22 illustrates a cross-sectional view of the light-emitting device 4 in accordance with an embodiment of the present application. As compared with the light-emitting device 3 in the above-described embodiment, in addition to the difference in the structure of the first pad and the second pad, the light-emitting device 4 comprises the same structure as that of the light-emitting device 3, and therefore the structure named by same terms or labelled by same numbers of the light-emitting devices 3 and 4 will be omitted in this embodiment or not repeat them in the following description. When the light-emitting device 4 is mounted onto the package substrate in the form of flip chip by AuSn eutectic bonding, the height difference between the first pad 80 b and the second pad 90 b is preferably as small as possible to enhance the bonding stability between the pad and the package substrate. As shown in FIG. 22, the second insulating layer 50 b under the first pad 80 b covers the reflective layer 40 b and the second insulating layer 50 b under the second pad 90 b comprises the second insulating opening 502 b to expose the reflective layer 40 b or the barrier layer 41 b. In the present embodiment, in order to reduce the height difference between the most top surface 80 s of the first pad 80 b and the most top surface 90 s of the second pad 90 b, the first third insulating opening 701 b comprises a width larger than that of the second third insulating opening 702 b. When the first pad 80 b and the second pad 90 b are respectively formed in the first third insulating layer opening 701 b and the second third insulating layer opening 702 b, the whole first pad 80 b is formed in the first third insulating layer opening 701 b to contact the first contact layer 601 b. The second pad 90 b is formed in the second third insulating opening 702 b to contact the reflective layer 40 b and/or the barrier layer 41 b. The second pad 90 b extends from the second third insulating opening 702 b to cover a partial surface of the third insulating layer 70 b. In other words, the third insulating layer is not formed under the first pad 80 b, but is partially formed under the second pad 90 b. In this embodiment, the height difference between the first pad 80 b and the second pad 90 b is smaller than 0.5 μm, preferably less than 0.1 μm, more preferably less than 0.05 μm.

FIG.23 illustrates a cross-sectional view of the light-emitting device 5 in accordance with an embodiment of the present application. As compared with the light-emitting devices 3, 4 in the above-described embodiment, in addition to the difference in the structure of the second pad, the light-emitting device 5 comprises the same structure as those of the light-emitting devices 3, 4 and therefore, the structure named by same terms or labelled by same numbers of the light-emitting devices 3, 4 and 5 will be omitted in this embodiment or not repeat them in the following description. When the light-emitting device 5 is mounted onto the package substrate in the form of flip chip by AuSn eutectic bonding, the height difference between the first pad 80 b and the second pad 90 b is preferably as small as possible to enhance the bonding stability between the pad and the package substrate. As described above, in addition to forming a portion of the third insulating layer under the second pad 90 b, a second buffer pad 910 b is formed under the second pad 90 b to reduce the height difference between the top surface of the first pad 80 b and the top surface of the second pad 90 b. As shown in FIG. 23, the second insulating layer 50 b under the first pad 80 b covers the reflective layer 40 b, and the second insulating layer 50 b under the second pad 90 b comprises the second insulating opening 502 b to expose the reflective layer 40 b or barrier layer 41 b. In the embodiment, the whole first pad 80 b is formed in the first third insulating opening 701 b to contact the first contact layer 601 b, and the whole second pad 90 b is formed in the second third insulating opening 702 b to contact the second contact layer 602 b. In other words, the third insulating layer does not formed under the first pad 80 b and the second pad 90 b. In the embodiment, the second buffer pad 910 b is formed between the second pad 90 b and the second contact layer 602 b to reduce the height difference between the top surface of the first pad 80 b and the top surface of the second pad 90 b, wherein the second buffer pad 910 b comprises a metal material other than gold (Au) and copper (Cu), such as chromium (Cr), nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), or osmium (Os) to prevent tin (Sn) of the AuSn eutectic from diffusing into the light-emitting device 5. In the embodiment, the height difference between the top surface of the first pad 80 b and the top surface of the second pad 90 b is less than 0.5 μm, preferably less than 0.1 μm, more preferably less than 0.05 μm. In the present embodiment, the second buffer pad 910 b comprises a thickness substantially same as the thickness of the second insulating layer 50 b.

FIG.24 illustrates a cross-sectional view of the light-emitting device 6 in accordance with an embodiment of the present application. As compared with the light-emitting devices 3, 4 in the above-described embodiment, in addition to the difference in the structure of the third insulating layer 70 b under the first pad 80 b, the light-emitting device 6 comprises the same structure as that of the light-emitting devices 3, 4 and therefore, the structure named by same terms or labelled by same numbers of the light-emitting devices 3, 4 and 6 will be omitted in this embodiment or not repeat them in the following description. As shown in FIG. 24, the third insulating layer 70 b can be formed on the semiconductor stack 10 b by sputter or vapor deposition, etc., and then patterned by lithography and etching to form the first third insulating openings 701 b on the first contact layer 601 b to expose the first contact layer 601 b and the second third insulating opening 702 b on the second contact layer 602 b to expose the second contact layer 602 b. The first pad 80 b and the second pad 90 b can be formed on the semiconductor stack 10 b by plating, sputter or vapor deposition, and then patterned by lithography and etching. The first pad 80 b contacts the first contact layer 601 b through the first third insulating openings 701 b and is electrically connected to the first semiconductor layer 101 b through the first contact layer 601 b. In the etching process for forming the first third insulating opening 701 b, the first contact layer 601 b and the second insulation layer 50 b under the first pad 80 b may be over etched that exposes the reflective layer 40 b and/or the barrier layer 41 b. In the embodiment, an area of the fist third insulating opening 701 b is reduced, and a first portion of the third insulating layer 70 b is formed between the first pad 80 b and the first contact layer 601 b and the first portion of the third insulating layer 70 b is entirely covered by the first pad 80 b. A second portion of the third insulating layer 70 b is formed around the first pad 80 b. The first third insulating opening 701 b is formed between the first portion and the second portion of the third insulating layer 70 b. Specifically, the first portion of the third insulating layer 70 b completely covered by the first pad 80 b comprises a width wider than that of the first third insulating opening 701 b under the pad 80 b. In the present embodiment, the first third insulating opening 701 b is an annular opening in the top view of the light-emitting device.

FIG. 25 is a schematic view of a light-emitting apparatus according to an embodiment of the present application. The light-emitting device 1, 2, 3, 4, 5, or 6 in the foregoing embodiment is mounted on the first spacer 511 and the second spacer 512 of the package substrate 51 in the form of flip chip. The first spacer 511 and the second spacer 512 are electrically insulated from each other by an insulating portion 53 comprising an insulating material. The main light-extraction surface of the flip-chip type of light-emitting diode is one side of the growth substrates 11 a and 11 b opposite to the electrode-forming surface. A reflective structure 54 can be provided around the light-emitting devices 1, 2, 3, 4, 5, or 6 to increase the light extraction efficiency of the light-emitting apparatus.

FIG. 26 illustrates a structure diagram of a light-emitting apparatus in accordance with an embodiment of the present application. A light bulb 600 comprises an envelope 602, a lens 604, a light-emitting module 610, a base 612, a heat sink 614, a connector 616 and an electrical connecting device 618. The light-emitting module 610 comprises a submount 606 and a plurality of light-emitting devices 608 on the submount 606, wherein the plurality of light-emitting devices 608 can be the light-emitting device 1, 2, 3, 4, 5 or 6 described in above embodiments.

The principle and the efficiency of the present application illustrated by the embodiments above are not the limitation of the application. Any person having ordinary skill in the art can modify or change the aforementioned embodiments. Therefore, the protection range of the rights in the application will be listed as the following claims. 

What is claimed is:
 1. A light-emitting device, comprising: a substrate; a semiconductor stack on the substrate and comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer comprises a surrounding part exposing a first surface of the first semiconductor layer; a first contact layer contacting the first surface of the first semiconductor layer; a second contact layer formed on the second semiconductor layer, being surrounded by the first contact layer; a first insulating layer or a second insulating layer comprising a first opening exposing the first semiconductor layer and a second opening exposing the second semiconductor layer; and a third insulating layer covering the first insulating layer or the second insulating layer, wherein the third insulating layer comprises a first third insulating opening exposing the first contact layer and a second third insulating opening exposing the second contact layer.
 2. The light-emitting device of claim 1, wherein the first contact layer is continuously formed along the first surface of the first semiconductor layer to surround the semiconductor stack.
 3. The light-emitting device of claim 1, wherein the first semiconductor layer comprises a first outside wall, the second semiconductor layer comprises a second outside wall, and one end of the first surface is connected to the first outside wall and another end of the first surface is connected to the second outside wall, the first contact layer covers a top surface of the second semiconductor layer, the second outside wall of the second semiconductor layer, and the first surface of the first semiconductor layer.
 4. The light-emitting device of claim 1, wherein the first contact layer comprises metal material.
 5. The light-emitting device of claim 1, wherein the second contact layer is separated apart from the first contact layer.
 6. The light-emitting device of claim 1, further comprising a first pad formed in the first third insulating opening and a second pad formed in the second third insulating opening, wherein a shortest distance between the first pad and the second pad is larger than a shortest distance between the first contact layer and the second contact layer.
 7. The light-emitting device of claim 1, wherein the first contact layer and the second contact layer comprise aluminum (Al).
 8. The light-emitting device of claim 1, wherein the first contact layer is between the second insulating layer and the third insulating layer.
 9. The light-emitting device of claim 8, wherein the first insulating layer or the second insulating layer comprises a Distributed Bragg reflector (DBR) structure.
 10. The light-emitting device of claim 1, wherein the third insulating layer comprises dielectric material.
 11. The light-emitting device of claim 10, wherein the third insulating layer comprises two or more layers.
 12. The light-emitting device of claim 1, further comprising a reflective layer formed on the second semiconductor layer and a barrier layer formed on the reflective layer.
 13. The light-emitting device of claim 12, wherein an outer edge of the barrier layer is disposed on an outer side of an outer edge of the reflective layer.
 14. The light-emitting device of claim 12, wherein an outer edge of the barrier layer is disposed on an inner side of an outer edge of the reflective layer.
 15. The light-emitting device of claim 12, further comprising a transparent conductive layer formed between the second semiconductor layer and the reflective layer, wherein the transparent conductive layer comprises an outer edge separated apart from the second outside wall of the second semiconductor layer and the active layer.
 16. The light-emitting device of claim 15, wherein an outer edge of the reflective layer is disposed on an inner side of an outer edge of the transparent conductive layer.
 17. The light-emitting device of claim 15, wherein an outer edge of the reflective layer is disposed on an outer side of an outer edge of the transparent conductive layer.
 18. The light-emitting device of claim 1, further comprising a via penetrating through the second semiconductor layer and the active layer to expose a second surface of the first semiconductor layer.
 19. The light-emitting device of claim 1, wherein a first obtuse angle is between the first outside wall of the first semiconductor layer and the surface of the substrate, and a second obtuse angle is between the second outside wall of the first semiconductor layer and the first surface of the first semiconductor layer.
 20. The light-emitting device of claim 1, wherein the light-emitting device comprises a side larger than 30 mil. 